Huili Xing, Cornell University
Professor
Ithaca, New York
grace.xing@cornell.edu
Office:
(607) 255-0605
Bio/Research
The topics I work on now can be loosely categorized into 4 areas, supported by DoD, NSF, SRC and Doe.1). GaN based devices. The current projects include GaN power diodes and transistors, AlN/GaN ultrascaled high electron mobility transistors for high-speed high power applications, polarization do...
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Bio/Research
The topics I work on now can be loosely categorized into 4 areas, supported by DoD, NSF, SRC and Doe.1). GaN based devices. The current projects include GaN power diodes and transistors, AlN/GaN ultrascaled high electron mobility transistors for high-speed high power applications, polarization doping for p-type in UV optoelectronic devices, negative differential resistance and plasma based THz sources for biomedical imaging and spectroscopy, wafer fused enabled hybrid structures. 2). nanowire enabled devices, including InGaN nanowires for high efficiency green emission and solar cells, II-VI nanowires for polarization sensitive wide spectrum photodetection etc. 3) 2D crystal materials and devices. We investigate van der Waals epitaxy, carrier electrostatics and transport, optoelectronic responses, p-n junctions and heterostructures, field modulation and tunneling, metamaterials and THz applications, graphene physics and devices. We investigate graphene based metamaterials for THz applications, lateral bandgap engineering in graphene, carrier electrostatics and transport, and optoelectronic responses, p-n junctions, field modulation and tunneling phenomena. 4) steep slope transistors for high-efficiency logic and RF electronics, especially tunnel FETs. We pioneered design, fabrication and characterization of III-V TFETs. Our current focus is 2D-crystal based steep slope transistors: the Thin-TFETs, tunneling field effect transistors for high efficiency logic electronics.
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