Saraswat is working on a variety of problems related to new and innovative materials, structures, and process technology of silicon, germanium and III-V devices and interconnects for VLSI and nanoelectronics. Areas of his current interest are: new device structures to continue scaling MOS transis...
Saraswat is working on a variety of problems related to new and innovative materials, structures, and process technology of silicon, germanium and III-V devices and interconnects for VLSI and nanoelectronics. Areas of his current interest are: new device structures to continue scaling MOS transistors, DRAMs and flash memories to nanometer regime, 3-dimentional ICs with multiple layers of heterogeneous devices, metal and optical interconnections and high efficiency and low cost solar cells.