Dynamic processes during thin film growth are investigated with an emphasis on semiconductor heterosystems.
In particular we are currently studying morphologies formed by metal deposits such as Ga, In and Sn on GaAs and InP surfaces and silicon.
These studies are complemented by applications of these concepts in technologically relevant systems, currently focussing on silicide formation on silicon and silicon- germanium alloy surfaces.
Fundamental topics are surface diffusion, clustering and nucleation and self-etching.