Xiaorong Qin, University of Guelph

Profile photo of Xiaorong Qin, expert at University of Guelph

Associate Professor Guelph, Ontario xqin@physics.uoguelph.ca Office: (519) 824-4120 ext. 53675

Bio/Research

Dr. Qin's group researches the use of scanning tunnelling microscopy/spectroscopy (STM/STS), atomic force microscopy (AFM), and scanning near-field optical microscopy (SNOM) in characterizing structural, electronic and optical properties of surfaces and interfaces at atomic/molecular/nanometer sc...

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Bio/Research

Dr. Qin's group researches the use of scanning tunnelling microscopy/spectroscopy (STM/STS), atomic force microscopy (AFM), and scanning near-field optical microscopy (SNOM) in characterizing structural, electronic and optical properties of surfaces and interfaces at atomic/molecular/nanometer scales. Qin's group also uses other experimental techniques including ultrahigh vacuum, surface science, and synchrotron radiation. The research activities mainly cover two areas:

1) The study of the structural properties of vacuum vapour-deposited thin films of organic small molecules (polyaromatic hydrocarbons), such as tetracene, on silicon-based substrates or passivated silicon surfaces. The aim is to achieve a molecular-level understanding of the interface formation mechanisms (at a few molecular layers in thickness) and to characterize the role of film crystallinity, defects and substrate properties in controlling the relevant film quality and stability in the hybrid organic-inorganic junctions;

2) The investigation of carrier transport and other exceptional properties of the films for seeking their potential applications in organic electronics.

Driven by the present trend of device miniaturization and emerging opportunities of molecular electronics, high-precision measurement and atomic-scale manipulation of materials are increasingly required. When the device dimensions decrease to the point where a single molecular layer may represent a significant percentage of the device scales, surface and interface effects (surface stress and relaxation, morphological and structural irregularities, concentration of unsaturated bonds, and atomic-intermixing, etc.), they can significantly influence device properties, understanding surface reactions and the ordering of atoms or molecules are thus highly desirable.


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